T. Paul Chow

Professor at Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute5 Followers

Dedicated to building bridges between disciplines in the realm of electrical engineering, T. Paul Chow is a distinguished Professor in the Electrical, Computer, and Systems Engineering Department at Rensselaer Polytechnic Institute (RPI). With a career that spans several decades, Dr. Chow has made significant contributions to the field of semiconductor power devices and energy efficiency. His journey in academia and research is marked by a commitment to innovation and interdisciplinary collaboration. Before joining RPI in 1989, Dr. Chow honed his expertise at General Electric Corporate Research and Development. During his tenure there, he conducted pioneering research on thin films, refractory metals, metal silicides, and MOS-gated unipolar and bipolar devices. This experience laid a strong foundation for his subsequent academic pursuits and research endeavors at RPI. At RPI, Dr. Chow's research interests are diverse yet interconnected, focusing on high-voltage power integrated circuits, wide bandgap semiconductors, and distributed system platforms. His work is driven by a passion for enhancing energy efficiency and developing cutting-edge technologies that can have a transformative impact on the industry. Dr. Chow's research has been instrumental in advancing the development of high-voltage SiC power devices, a testament to his dedication to pushing the boundaries of what is possible in semiconductor technology. Dr. Chow has an impressive portfolio of publications, reflecting his deep engagement with the academic community and his commitment to sharing knowledge. His research projects have not only contributed to the advancement of technology but have also provided valuable insights into the practical applications of semiconductor devices in various industries. Throughout his career, Dr. Chow has been a mentor and guide to many students and researchers, fostering a culture of curiosity and innovation. His work continues to inspire the next generation of engineers and researchers, encouraging them to explore new frontiers in electrical engineering and beyond.

Research Interests

Semiconductor power devices Energy efficiency High-voltage power integrated circuits Wide bandgap semiconductors Distributed system platforms Thin films Refractory metals Metal silicides MOS-gated devices SiC power devices

Publications

1 - Metal–Oxide–Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN,Japanese Journal of Applied Physics

Shinya Takashima , Zhongda Li , T. Paul Chow ,

, 08JN24, 2013-05-31

2 - Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors,physica status solidi (a)

Mohamed Torky , Yanzhen Zhao , Panagiotis Lazos , T. Paul Chow ,

, 2023-07-04

3 - Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask,Materials Science Forum

Can Hua Li , I. Bhat , T. Paul Chow ,

, 259-262, 2006-10-15

4 - Characterization of NbSi2 thin films,Journal of Applied Physics

Curtiss D. Rude , T. Paul Chow , Andrew J. Steckl ,

, 5703-5709, 1982-08-01

5 - Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC,Materials Science Forum

Sauvik Chowdhury , Kensaku Yamamoto , T. Paul Chow ,

, 635-638, 2016-05-24

6 - Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors,Journal of Applied Physics

Rongjun Wang , Ishwara B. Bhat , T. Paul Chow ,

, 7587-7592, 2002-12-15

7 - Determination of the effective critical breakdown field for Si, wide, and extreme bandgap semiconductor superjunction devices,AIP Advances

Mohamed Torky , T. Paul Chow ,

, 2024-05-01

8 - Forward Active and Blocking Performance of 4H-SiC Bipolar Junction Transistors,MRS Proceedings

Santhosh Balachandran , T. Paul Chow , Anant Agarwal ,

, 2005-01-01

9 - Avalanche Breakdown Design Parameters in GaN,Japanese Journal of Applied Physics

Zhongda Li , Vipindas Pala , T. Paul Chow ,

, 08JN05, 2013-05-20

10 - Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC,Materials Science Forum

Sauvik Chowdhury , Kensaku Yamamoto , Collin W. Hitchcock , T. Paul Chow ,

, 500-503, 2015-06-30

11 - Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC,Solid State Phenomena

Mohamed Torky , T. Paul Chow ,

, 163-167, 2024-08-23

12 - Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration,Materials Science Forum

Sunil Rao , T. Paul Chow , I. Bhat ,

, 597-600, 2006-10-15

13 - Study of CF4 plasma treatment in drift region optimization of high‐voltage GaN MOSC‐HEMTs,physica status solidi c

Zhongda Li , Jie Zhang , T. Paul Chow ,

, 861-863, 2011-12-07

14 - Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs,Materials Science Forum

Mohamed Torky , T. Paul Chow ,

, 565-569, 2022-05-31

15 - Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs,physica status solidi (a)

Zhibo Guo , T. Paul Chow ,

, 1137-1144, 2015-01-30

16 - Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices,Materials Science Forum

Xiang Zhou , Zhi Bo Guo , T. Paul Chow ,

, 693-696, 2019-07-19

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